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But it provides too small emission current density and gives a large gate current.
但不足之处是发射电流密度太小和有较大的栅极电流。
The gate current is produced by the tunneling, the electron surmounting and percolation.
发现器件的栅电流不是由单一的隧穿引起,同时还有电子的翻越和渗透。
Once the device begins to conduct, it is latched on and the gate current can be removed.
一旦器件(晶闸管)导通,门极电流即可去掉。
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